Theory of Ballistic Nanotransistors
نویسندگان
چکیده
Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional (2-D) electrostatic effects are small (and when the insulator capacitance is much less than the semiconductor (quantum) capacitance), the model reduces to Natori’s theory of the ballistic MOSFET. The model also treats 2-D electrostatics and the quantum capacitance limit where the semiconductor quantum capacitance is much less than the insulator capacitance. This new model provides insights into the performance of MOSFETs near the scaling limit and a unified framework for assessing and comparing a variety of novel transistors.
منابع مشابه
Analytical model of 1D Carbon-based Schottky-Barrier Transistors
Nanotransistors typically operate in far-fromequilibrium (FFE) conditions, that cannot be described neither by drift-diffusion, nor by purely ballistic models. In carbonbased nanotransistors, source and drain contacts are often characterized by the formation of Schottky Barriers (SBs), with strong influence on transport. Here we present a model for onedimensional field-effect transistors (FETs)...
متن کاملSimulating Quasi-Ballistic Transport in Si Nanotransistors
Electron transport in model Si nanotransistors is examined by numerical simulation using a hierarchy of simulation methods, from full Boltzmann, to hydrodynamic, energy transport, and drift-diffusion. The on-current of a MOSFET is shown to be limited by transport across a lowfield region about one mean-free-path long and located at the beginning of the channel. Commonly used transport models ba...
متن کاملOrientation Effects in Ballistic High-Strained P-type Si Nanowire FETs
In order to design and optimize high-sensitivity silicon nanowire-field-effect transistor (SiNW FET) pressure sensors, this paper investigates the effects of channel orientations and the uniaxial stress on the ballistic hole transport properties of a strongly quantized SiNW FET placed near the high stress regions of the pressure sensors. A discrete stress-dependent six-band k.p method is used f...
متن کاملThe Ballistic Nanotransistor: A Simulation Study
Future MOS transistors may operate near their ballistic limits [1], so it is important to understand ballistic device physics and the prospects for achieving quasi-ballistic operation. In this paper, we explore the device design and physics issues of MOSFETs at the scaling limits using semiclassical and full quantum simulations. The device we presume is a double-gate (DG) MOSFET with symmetrica...
متن کاملTwo-dimensional quantum mechanical modeling of nanotransistors
Quantization in the inversion layer and phase coherent transport are anticipated to have significant impact on device performance in ‘‘ballistic’’ nanoscale transistors. While the role of some quantum effects have been analyzed qualitatively using simple one-dimensional ballistic models, two-dimensional ~2D! quantum mechanical simulation is important for quantitative results. In this paper, we ...
متن کامل